Electric Vehicles are Driving the Demand for SiC Wafers for High Power Electronics
Silicon Carbide (SiC) power electronics provide higher power density and higher efficiency than silicon-based technologies, enabling faster charging times and expanded EV range.
Polycrystalline SiC + Argon Gas
CVD Equipment’s PVT Processing Systems
High-Quality SiC Crystal Boules
CVD Equipment Corporation introduces state-of-the are physical vapor transport (PVT) systems for silicon carbide (SiC) crystal boule growth. With precise thermodynamics and chemical kinetics to drive the reaction, polycrystalline SiC will sublime under low pressure and high temperatures. Our PVT product series provides precise and reliable control of all process parameters. Exclusively engineered for high yield, run-to-run repeatability and system-to-system matching, 150 mm and 200 mm boule diameters can be achieved.
PVT System Features & Benefits:
Hydride Vapor Phase Epitaxy (HVPE) Systems are used to grow polycrystalline bulk gallium nitride (GaN) as the precursor for monocrystalline gallium nitride wafer production. Our HVPE systems are also used to grow thick epitaxial single crystal layers of doped and undoped gallium nitride, Aluminum Nitride (AlN), Gallium Arsenide (GaAs), Indium Phosphide (InP), and other binary and ternary systems where a metal halide is reacted with one or several hydrides to form a solid crystal. CVDE understands the needs of our customer base and prides itself on the wide array of system features and options we can offer; this sets us apart from other OEMs. We’ve artfully engineered so you can deliver better results.
HVPE System Features & Benefits:
Over 40 years of expertise in CVD and thermal process equipment design and manufacturing.
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