Hydride Vapor Phase Epitaxy (HVPE) Systems
HVPE is a high-rate deposition process for growing high-quality crystals. A common application is the production of gallium nitride (GaN) templates and bulk crystals. Gallium chloride is generated in situ via a chlorination reaction. The gallium chloride is then mixed with ammonia at the growth substrate at high temperatures to form the GaN crystal. Doping is achieved with fine control by introducing dopant gases and vapors. Dopants can also be chloride vapors generated in situ.
Improved deposition uniformity
Resistive or RF induction heated
Optional Glove Box
Loading station with optional nitrogen-purged glovebox
Real-time process control, data logging, and recipe editing
Other III/V semiconductor crystals can be produced via HVPE, including indium phosphide (InP) and gallium arsenide (GaAs). Growth rates of epitaxial layers at up to ~ 300 µm/hr are readily achievable with HVPE.
Our HVPE systems can be configured for the particular requirements of the end user.
HVPE SYSTEM FEATURES & OPTIONS
powered by CVDWinPrC™
Powered by our CVDWinPrC™ process control software, the systems automatically log data and graphically show time-dependent values of user-selected parameters. CVDWinPrC™ also allows users to load preprogrammed recipes, modify, check, and create new recipes, and view real-time or saved process data.
The systems have application configured safety protocols embedded into relay logic, PLC, and CVDWinPrC™ software.
High-Touch Customer Service, Including:
- Site Survey
- Installation Coordination and Field Acceptance
- NRTL/UL/CE Certification Available
- Initial Start-Up Support
- On-Site Training
- Warranty Response and Remote Capability
- Help Desk Support & Customized Service Contract Plans
- Continuous Improvement Programs and Support
- Customized Site Support Contracts
- Spares and Consumables
- Preventative Maintenance
- Site Personnel Contracts
Over 40 years of expertise in CVD and thermal process equipment design and manufacturing.
“enabling tomorrow’s technologies ™ ”