UHVCVD Systems

Process Tube Vacuum System – is designed for operation of the process tube at less than 10 mTorr and is capable of pumping a clean process tube to a level of less than 10-9 Torr at room temperature with no gas flows.

Loadlock Vacuum System – is designed for pumping a clean load lock to a level of less than 107 Torr at room temperature with no gas flows.

Heating System – CVD Equipment Corporation’s resistance heating element is specifically designed for applications requiring precision uniform heating in both the radial and axial directions. The low mass three-zone heating element is designed to give a uniform flat zone (±0.5 °C) extremely quick response, and long life.

The gas system is designed to be in close proximity to the process chamber gas inlet to allow for close coupling between components and the process chamber. This provides for minimal line length, and minimal d dead space, and allows for fast gas switching

We also offer multi-chamber cluster systems with an LPCVD chamber and/or an evaporator chamber attached to the UHVCVD chamber. A high vacuum transfer chamber is provided to allow wafer transfer between process chambers under a partial pressure of H₂.

A typical use of this system is for low-temperature deposition of silicon, silicon germanium, and germanium epitaxial films where abrupt changes in composition and dopant levels are required.